Titanium nitride: A new Ohmic contact material for n-type CdS
نویسندگان
چکیده
منابع مشابه
Thermal stability of a-titanium in contact with titanium nitride
The thermal stability of an a-Ti film in contact with a d-TiN film in the structure of a TiN/Ti/TiN film stack on SiO2 substrates was studied by in situ sheet resistance (Rs) measurement, Auger electron spectroscopy, glancing angle x-ray diffractometry, cross-sectional transmission electron microscopy, scanning electron microscopy, and atomic force microscopy. It was found that nitrogen dissolv...
متن کاملBoron nitride: A new photonic material
Rhombohedral Boron Nitride (r-BN) layers were grown on sapphire substrate in a hot-wall chemical vapor deposition reactor. Characterization of these layers is reported in details. Xray diffraction (XRD) is used as a routine characterization tool to investigate the crystalline quality of the films and the identification of the phases is revealed using detailed pole figure measurements. Transmiss...
متن کاملa new type-ii fuzzy logic based controller for non-linear dynamical systems with application to 3-psp parallel robot
abstract type-ii fuzzy logic has shown its superiority over traditional fuzzy logic when dealing with uncertainty. type-ii fuzzy logic controllers are however newer and more promising approaches that have been recently applied to various fields due to their significant contribution especially when the noise (as an important instance of uncertainty) emerges. during the design of type- i fuz...
15 صفحه اولBioactive silicon nitride: A new therapeutic material for osteoarthropathy
While the reciprocity between bioceramics and living cells is complex, it is principally governed by the implant's surface chemistry. Consequently, a deeper understanding of the chemical interactions of bioceramics with living tissue could ultimately lead to new therapeutic strategies. However, the physical and chemical principles that govern these interactions remain unclear. The intricacies o...
متن کاملLow resistivity Hf/Al/Ni/Au Ohmic Contact Scheme to n-Type GaN
The electrical and structural properties of Hf/Al/Ni/Au (20/100/25/50 nm) ohmic contact to n-GaN are reported in this study. Specific contact resistivities of Hf/Al/Ni/Au based contacts have been investigated as a function of annealing temperature and achieve the lowest value of 1.09×10 Ω·cm after annealing at 650 C in vacuum. A detailed mechanism of ohmic contact formation is discussed. By usi...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Journal of Applied Physics
سال: 2011
ISSN: 0021-8979,1089-7550
DOI: 10.1063/1.3615946